15-nm Channel Length MoS2 FETs with Single- and Double-Gate structures

被引：0

作者：

Nourbakhsh, A. ^{[1
,2
]}

Zubair, A. ^{[1
]}

Huang, S. ^{[1
]}

Ling, X. ^{[1
]}

Dresselhaus, M. S. ^{[1
]}

Kong, J. ^{[1
]}

De Gendt, S. ^{[2
,3
]}

Palacios, T. ^{[1
]}

机构：

[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[3] KULeuven, B-3001 Leuven, Belgium

来源：

2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY) | 2015年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We demonstrate single-and double-gated (SG & DG) field effect transistors (FETs) with a record source-drain length (L-S/D) of 15 nm built on monolayer (t(ch)similar to 0.7 nm) and 4-layer (t(ch)similar to 3 nm) MoS2 channels using monolayer graphene as the Source/Drain contacts. The best devices, corresponding to DG 4-layer MoS2-FETs with L-S/D=15 nm, had an I-on/I-off in excess of 10(6) and a minimum subthreshold swing (SSmin.) of 90 mV/dec. at V-DS=0.5 V. At L-S/D=1 mu m and V-DS=0.5 V, SSmin.=66 mV/dec., which is the best SS reported in MoS2 FETs, indicating the high quality of the interface and the enhanced channel electrostatics.

引用

页数：2

共 49 条

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