Optical investigations of strained InCaAs quantum wells

InGaAs/GaAs MOCVD-grown quantum wells have been investigated, Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and light-hole excitonic transitions in the quantum wells have been observed, The transition energies obtained have been compared with values derived from theoretical considerations using the envelope function model including lattice-mismatch-related stress. The heavy-and light-hole transitions have been identified as excitonic transitions of types I and II respectively. (C) 1997 John Wiley & Sons, Ltd.