Double-gated silicon field emission arrays: Fabrication and characterization

被引：0
作者：
Chen, LY [1 ]
Akinwande, AI [1 ]
机构：
[1] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA
来源：
TECHNICAL DIGEST OF THE 17TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE | 2004年
关键词：
D O I：
10.1109/IVNC.2004.1354971
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：200 / 201
页数：2
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