Applying uniform reversible strain to epitaxial oxide films

被引：80
作者：
Biegalski, M. D. [1 ]
Doerr, K. [2 ]
Kim, D. H. [3 ]
Christen, H. M. [1 ]
机构：
[1] Oak Ridge Natl Lab, CNMS, Oak Ridge, TN 37830 USA
[2] IFW Dresden, Inst Metall Mat, D-01171 Dresden, Germany
[3] Tulane Univ, Dept Phys & Engn Phys, New Orleans, LA 70118 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期
关键词：
bismuth compounds; epitaxial layers; lanthanum compounds; lattice constants; Poisson ratio; strontium compounds; X-ray diffraction; THIN-FILMS;
D O I：
10.1063/1.3374323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate using four-circle x-ray diffraction that the piezoelectric substrate of Pb(Mg1/3Nb2/3)(0.72)Ti0.28O3(001) induces uniform reversible in-plane strain to epitaxially-grown oxide films and bilayers. The biaxial in-plane strain depends linearly on the applied electrical voltage. Utilizing the reversible strain, the strain-dependent lattice structure and the Poisson number characterizing the elastic response is determined for 200 nm thick SrTiO3, LaScO3, and BiFeO3 films. The uniformity and reversibility of the strain provides access to the direct quantitative measurement of strain-dependent properties of epitaxial oxide films.
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页数：3
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  • [1] Enhancement of ferroelectricity in strained BaTiO3 thin films
    Choi, KJ
    Biegalski, M
    Li, YL
    Sharan, A
    Schubert, J
    Uecker, R
    Reiche, P
    Chen, YB
    Pan, XQ
    Gopalan, V
    Chen, LQ
    Schlom, DG
    Eom, CB
    [J]. SCIENCE, 2004, 306 (5698) : 1005 - 1009
  • [2] Strain control of domain-wall stability in epitaxial BiFeO3 (110) films
    Cruz, M. P.
    Chu, Y. H.
    Zhang, J. X.
    Yang, P. L.
    Zavaliche, F.
    He, Q.
    Shafer, P.
    Chen, L. Q.
    Ramesh, R.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (21)
  • [3] Dynamically tuning properties of epitaxial colossal magnetoresistance thin films
    Dale, D
    Fleet, A
    Brock, JD
    Suzuki, Y
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (21) : 3725 - 3727
  • [4] Electric-field-, temperature-, and stress-induced phase transitions in relaxor ferroelectric single crystals
    Davis, M
    Damjanovic, D
    Setter, N
    [J]. PHYSICAL REVIEW B, 2006, 73 (01)
  • [5] Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics
    Ederer, C
    Spaldin, NA
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (25)
  • [6] Giant sharp and persistent converse magnetoelectric effects in multiferroic epitaxial heterostructures
    Eerenstein, W.
    Wiora, M.
    Prieto, J. L.
    Scott, J. F.
    Mathur, N. D.
    [J]. NATURE MATERIALS, 2007, 6 (05) : 348 - 351
  • [7] Magnetic and electric phase control in epitaxial EuTiO3 from first principles
    Fennie, Craig J.
    Rabe, Karin M.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (26)
  • [8] Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films
    Habermeier, H-U
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (43)
  • [9] Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films
    Jang, H. W.
    Baek, S. H.
    Ortiz, D.
    Folkman, C. M.
    Das, R. R.
    Chu, Y. H.
    Shafer, P.
    Zhang, J. X.
    Choudhury, S.
    Vaithyanathan, V.
    Chen, Y. B.
    Felker, D. A.
    Biegalski, M. D.
    Rzchowski, M. S.
    Pan, X. Q.
    Schlom, D. G.
    Chen, L. Q.
    Ramesh, R.
    Eom, C. B.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (10)
  • [10] Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films
    Kim, Dae Ho
    Lee, Ho Nyung
    Biegalski, Michael D.
    Christen, Hans M.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (01)
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