Lattice mismatch effects on the hetero interface structure of YBCO films grown by liquid phase epitaxy

被引:6
|
作者
Sugawara, Y [1 ]
Ikuhara, Y [1 ]
Kitamura, T [1 ]
Hirabayashi, I [1 ]
机构
[1] ISTEC, SUPERCONDUCT RES LAB, DIV 8, NAGOYA, AICHI 456, JAPAN
关键词
liquid phase epitaxy; YBCO film; transmission electron microscopy; misfit dislocation network; geometrical misfit dislocation; stacking fault; critical current density;
D O I
10.2320/jinstmet1952.61.9_942
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Electronic and magnetic properties of oxide superconducting films grown on a substrate strongly depend on the film/substrate interface. In this study, the lattice mismatch effects on the interface structure of YBCO films grown by liquid phase epitaxy were investigated by characterizing two model systems. These two systems, YBCO/NdGaO3(f:0.84 similar to 0.90%) and YBCO/MgO(f:9.1 similar to 25%), differ by their small and large lattice mismatches, respectively. In the case of the YBCO/NdGaO3 interface, misfit dislocation network is introduced to accomodate lattice strain along the interface. The misfit dislocations are composed of [(1) over bar 10](NdGaO3), [002](NdGaO3) and [100](YBCO) edge type dislocations depending on the crystal orientation, and hence extra half planes exist both in NdGaO3 and YBCO crystals. The orthogonal sets of misfit dislocations are dissociated to form nodes which also have an edge component. The critical current density J(ci) in the YBCO film is as low as 9.0 x 10(2) A/cm(2) at 77 K in 1 T. In the case of the YBCO/MgO interface, geometrical misfit dislocations are formed at the interface. The geometrical misfit dislocations accompany local lattice bending in the vicinity of the interface. In the YBCO film, a high density of edge dislocations with their Burgers vector perpendicular to the interface exist, which result in the formation of stacking faults on the ab plane in the YBCO crystals. Such defects may be introduced during crystal growth by following the local lattice bending due to the geometrical misfit dislocation. The J(ci) in the YBCO film is as high as 5.4 x 10(5) A/cm(2) at 77 K in 1 T. The difference in critical current densities between two specimens presumably originates fi-om the density of pinning centers for magnetic flux in YBCO crystals.
引用
收藏
页码:942 / 950
页数:9
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