Depth profiling of boron using gamma rays from the 11B(p, γ)12C reaction

被引：1
|
作者：
Koerdel, Martin
Haberl, Arthur W.
Bakhru, Hassaram
机构：
[1] SUNY Albany, Ion Beam Lab, Albany, NY 12222 USA
[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
[3] Univ Wurzburg, D-97070 Wurzburg, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 261卷 / 1-2期
关键词：
boron detection; depth profiling; NRA; gamma rays;
D O I：
10.1016/j.nimb.2007.03.041
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The gamma ray yield of the B-11(p, gamma)C-12 resonance reaction at 163 keV was applied to depth profiling. This reaction is capable of providing boron concentration versus depth up to more than I mu m in conductive and non-conductive films. To avoid the interferences of reactions of lighter elements, the gamma ray of 11.68 MeV was selected for profiling. Using a numerical method, the interference of the higher resonances was subtracted. Comparison data from the B-11(p, alpha)2 alpha reaction was taken for completeness. Additionally, the profiling capabilities of the B-11(p, gamma)C-12 and B-11(p, alpha(0))Be-8 reaction are compared. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：520 / 523
页数：4
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