Depth profiling of boron using gamma rays from the 11B(p, γ)12C reaction

被引：1

作者：

Koerdel, Martin

Haberl, Arthur W.

Bakhru, Hassaram

机构：

[1] SUNY Albany, Ion Beam Lab, Albany, NY 12222 USA

[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[3] Univ Wurzburg, D-97070 Wurzburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 261卷 / 1-2期

关键词：

boron detection; depth profiling; NRA; gamma rays;

D O I：

10.1016/j.nimb.2007.03.041

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The gamma ray yield of the B-11(p, gamma)C-12 resonance reaction at 163 keV was applied to depth profiling. This reaction is capable of providing boron concentration versus depth up to more than I mu m in conductive and non-conductive films. To avoid the interferences of reactions of lighter elements, the gamma ray of 11.68 MeV was selected for profiling. Using a numerical method, the interference of the higher resonances was subtracted. Comparison data from the B-11(p, alpha)2 alpha reaction was taken for completeness. Additionally, the profiling capabilities of the B-11(p, gamma)C-12 and B-11(p, alpha(0))Be-8 reaction are compared. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：520 / 523

页数：4

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