Crystal growth and scintillation characteristics of the Nd3+ doped LaF3 single crystal

被引：23

作者：

Fukuda, Kentaro ^{[1
,2
]}

Kawaguchi, Noriaki ^{[1
,2
]}

Ishizu, Sumito ^{[2
]}

Yanagida, Takayuki ^{[1
]}

Suyama, Toshihisa ^{[2
]}

Nikl, Martin ^{[3
]}

Yoshikawa, Akira ^{[1
,4
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tokuyama Corp Shibuya, Shibuya Ku, Tokyo 1508383, Japan

[3] Inst Phys AS CR, Vvi, Prague 16253, Czech Republic

[4] Tohoku Univ, NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

OPTICAL MATERIALS | 2010年 / 32卷 / 09期

关键词：

Fluoride; Single crystal; Crystal growth from the melt; Scintillator; GAMMA-RAYS; READ-OUT; CHAMBER; TRIFLUORIDES; INTENSITY; EMISSION; DETECTOR; LIGHT; BAF2;

D O I：

10.1016/j.optmat.2010.03.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two-inch diameter Nd3+ doped LaF3 single crystals were successfully grown by the Czochralski technique. No remarkable absorption due to unfavorable impurities or color centers was observed from optical absorption measurements in the vacuum ultra-violet spectral region. The high crystallinity and homogeneous Nd3+ distribution were found from X-ray rocking curve and chemical composition analysis, respectively. X-ray excited luminescence spectrum was measured and the significant 4f25d-4f 3 luminescence at 173 nm was observed in the grown crystal. The pulse height spectrum and scintillation decay curves were taken upon γ-ray irradiation. As a result, the grown crystals demonstrated sufficient response to the γ-ray, the light yield of 140 ± 30 photons/MeV, and fast scintillation decay of 7.6 ns. © 2010 Elsevier B.V. All rights reserved.

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页码：1142 / 1145

页数：4

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