Microwave Properties and Damping in [Pt/Co] Multilayers With Perpendicular Anisotropy

被引:7
|
作者
Caprile, Ambra [1 ]
Pasquale, Massimo [1 ]
Kuepferling, Michaela [1 ]
Coisson, Marco [1 ]
Lee, Tae Young [2 ]
Lim, Sang Ho [2 ,3 ]
机构
[1] Ist Nazl Ric Metrol, I-10135 Turin, Italy
[2] Korea Univ, Dept Nano Semicond Engn, Seoul 136701, South Korea
[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
基金
新加坡国家研究基金会;
关键词
Spin electronics; information storage; perpendicular magnetic anisotropy; magnetic damping; Pt-Co multilayers; MAGNETIC TUNNEL-JUNCTIONS; FERROMAGNETIC-RESONANCE; THIN-FILMS;
D O I
10.1109/LMAG.2014.2352596
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetic tunnel junctions with perpendicularly magnetized elements are being considered for next-generation, non-volatile, magnetic random access memory (MRAM) elements due to their large thermal stability, low Gilbert damping constant alpha, and very low critical current density J(c) required for spin-transfer-torque (STT), current-induced, magnetization switching. Here we study, by means of static magnetization and field-swept ferromagnetic resonance (FMR), [Pt/Co] multilayers with reduced Pt and Co layer thicknesses, ranging between 0.2 nm and 0.32 nm. Such materials are known to exhibit strong perpendicular magnetic anisotropy due to low interdiffusion, even after annealing up to 500 degrees C. We analyzed our data on FMR frequency versus applied magnetic field with the appropriate Kittel formulas and obtained a high anisotropy field H-k and a very low Gilbert damping constant alpha. This improvement makes the [Pt/Co] system with low overall Pt and Co content a promising candidate for STT-MRAM.
引用
收藏
页数:4
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