200°C operation of a DC-DC converter with SiC power devices

被引：12
|
作者：
Ray, Biswajit [1 ]
Kosai, Hiroyuki [2 ]
Scofield, James D. [3 ]
Jordan, Brett [3 ]
机构：
[1] Bloomsburg Univ Penn, Bloomsburg, PA 17815 USA
[2] UES Inc, Dayton, OH USA
[3] Air Force Res Lab, Wright Patterson AFB, OH USA
来源：
APEC 2007: TWENTY-SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/APEX.2007.357636
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Design, operation, and performance evaluation of a 180 W, 100 kHz, 270 V/28 V twotransistor forward dc-dc power converter are reported for elevated temperatures up to 200 degrees C. Use of SiC power semiconductor devices, and high temperature powdered ferrite (for magnetics design), and characterization of ceramic (X7R) capacitors' leakage current over temperature are presented as well.
引用
收藏
页码：998 / +
页数：2
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