How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs

被引：0

作者：

Ullah, A. R. ^{[1
]}

Joyce, H. J. ^{[2
]}

Burke, A. M. ^{[1
]}

Wong-Leung, J. ^{[2
]}

Tan, H. H. ^{[2
]}

Jagadish, C. ^{[2
]}

Micolich, A. P. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

2014 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2014) | 2014年

关键词：

InAs; nanowire FETs; wurtzite; zinc blende; WURTZITE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at most temperatures, presumably due to differences in carbon incorporation during growth.

引用

页码：283 / 285

页数：3

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