YFET - Trench Superjunction Process Window extended

被引：2

作者：

Hirler, Franz ^{[1
]}

Kapels, Holger ^{[1
]}

机构：

[1] Infineon Technol AG, D-85579 Neubiberg, Germany

来源：

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2009年

关键词：

D O I：

10.1109/ISPSD.2009.5158061

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The drift zone of superjunction devices consists of compensated n- and p-columns. The manufacturability of such devices is based on the thorough control of acceptors and donator concentrations. Shrinking the cell pitch to a few micrometers requires considerably better compensation control compared to 10 mu m pitch devices. A new concept that applies a stack of Y-shaped field plates to a charge compensated device is investigated by numerical simulation. The YFET concept provides a 7 times larger compensation process window compared to a device with oxide filled trenches, allowing much higher doping concentrations. A specific on-resistance of 0.65 Omega mm(2) at a breakdown voltage of 680V can be achieved at a cell pitch of about 4.6 mu m.

引用

页码：299 / 302

页数：4