共 46 条
Influence of vacancy defects in solid high-order harmonic generation
被引:43
作者:

Pattanayak, Adhip
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机构:
Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India

Mrudul, M. S.
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Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India

Dixit, Gopal
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机构:
Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India
机构:
[1] Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India
关键词:
DYNAMICS;
D O I:
10.1103/PhysRevA.101.013404
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
The present work discusses the impact of vacancy defects in solid high-order harmonic generation. The total energy cutoff of the high-order harmonic spectrum increases as a function of concentration of vacancy defects, and the total spectrum gradually turns into a single slanted spectrum without having an abrupt transition between primary and secondary plateaus. The spectral intensity of the below-band-gap harmonics in a solid with vacancy defects is enhanced significantly in comparison to the harmonics in a pristine solid. The changes in the harmonic spectra are understood in terms of their effective band structures. The presence of vacancy defects breaks the translational symmetry of the unit cell locally. As a consequence of this, new defect states appear, which open additional paths for the electron dynamics. The ill-resolved electron trajectories in the Gabor profile confirm the interference of additional paths. Moreover, the single slanted high-order harmonic spectrum carries a unique signature of vacancy defects in comparison to the high-order harmonic spectrum corresponding to solids with defects such as underdoping or overdoping.
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