Pressure and Temperature Effects on the Magnetic Properties of Donor Impurities in a GaAs/AlGaAs Quantum Heterostructure Subjected to a Magnetic Field

被引：0
|
作者：
Abu Zaid, Samah F. [1 ]
Shaer, Ayham [1 ]
Hjaz, Eshtiaq [1 ]
Ali, Mahmoud [1 ]
Elsaid, Mohammad K. [1 ]
机构：
[1] An Najah Natl Univ, Fac Sci, Dept Phys, Nablus, West Bank, Palestine
来源：
JORDAN JOURNAL OF PHYSICS | 2021年 / 14卷 / 03期
关键词：
Exact diagonalization; Donor impurity; Magnetic field; Magnetization; Magnetic susceptibility; Pressure and temperature; HYDROGENIC IMPURITY; BINDING-ENERGY; DIAMAGNETIC SUSCEPTIBILITY; HYDROSTATIC-PRESSURE; SHALLOW DONOR; DOT; STATES;
D O I：
10.47011/14.3.5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The exact diagonalization method has been used to solve the effective-mass Hamiltonian of a single electron confined parabolically in the GaAs/AlGaAs quantum heterostructure, in the presence of a donor impurity and under the effect of an applied uniform magnetic field. The donor impurity is located at distance (d) along the growth direction which is perpendicular to the motion of the electron in a two-dimensional heterostructure layer. We have investigated the dependence of the magnetization (M) and magnetic susceptibility (chi) of a GaAs/AlGaAs quantum heterostructure nanomaterial on the magnetic field strength (omega(c)), confining frequency (omega(o)), donor impurity position (d), pressure (P) and temperature (T).
引用
收藏
页码：231 / 238
页数：8
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