Characterization of ZnO films grown on different substrates by L-MBE method

被引：0

作者：

Yang, XD ^{[1
]}

Zhang, JW ^{[1
]}

Xu, QA ^{[1
]}

He, YN ^{[1
]}

Wang, HB ^{[1
]}

Zhang, WF ^{[1
]}

Hou, X ^{[1
]}

机构：

[1] Key Lab Photon Technol Informat, Xian 710049, Peoples R China

来源：

FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2004年 / 5774卷

关键词：

ZnO; laser molecular beam epitaxy; photoluminescence; atomic force microscopy;

D O I：

10.1117/12.608013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O3. The crystallinity and orientation of the films. as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).

引用

页码：369 / 372

页数：4

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