High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge(100): Electrical and chemical characterizations

被引：10

作者：

Chu, R. L.

Lin, T. D.

Chu, L. K.

Huang, M. L.

Chang, C. C.

Hong, M. ^{[1
]}

Lin, C. A.

Kwo, J.

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

HIGH-KAPPA DIELECTRICS; DEVICES; SI;

D O I：

10.1116/1.3271143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-kappa dielectric Ga2O3 (Gd2O3) (GGO) has been deposited on Ge 100 at room temperature using molecular beam epitaxy. In situ angular-resolved x-ray photoelectron spectroscopy on the GGO/Ge after gate dielectric deposition and 500 C postdeposition annealing has exhibited negligible Ge interdiffusion, thus revealing high thermal stability of the heterostructure. The CF4-plasma treatment on the passivated GGO/Ge has greatly improved the capacitance-voltage characteristics of the metal-oxide-semiconductor capacitors, besides the very low gate leakage current density of 3.2 10-9 A/cm2 at a flat-band voltage +1 V. These excellent interfacial characteristics have been achieved without employing any intentional passivation layers

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页数：4

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共 17 条

[1] Capacitance-voltage characterization of GaAs-Al2O3 interfaces [J].

Brammertz, G. ;

Lin, H. -C. ;

Martens, K. ;

Mercier, D. ;

Sioncke, S. ;

Delabie, A. ;

Wang, W. E. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

[2] Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance [J].

Brunco, D. P. ;

De Jaeger, B. ;

Eneman, G. ;

Mitard, J. ;

Hellings, G. ;

Satta, A. ;

Terzieva, V. ;

Souriau, L. ;

Leys, F. E. ;

Pourtois, G. ;

Houssa, M. ;

Winderickx, G. ;

Vrancken, E. ;

Sioncke, S. ;

Opsomer, K. ;

Nicholas, G. ;

Caymax, M. ;

Stesmans, A. ;

Van Steenbergen, J. ;

Mertens, P. W. ;

Meuris, M. ;

Heyns, M. M. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (07) :H552-H561

[3] Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As [J].

Chiu, H. C. ;

Tung, L. T. ;

Chang, Y. H. ;

Lee, Y. J. ;

Chang, C. C. ;

Kwo, J. ;

Hong, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (20)

[4] Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices [J].

Chu, L. K. ;

Lin, T. D. ;

Huang, M. L. ;

Chu, R. L. ;

Chang, C. C. ;

Kwo, J. ;

Hong, M. .

APPLIED PHYSICS LETTERS, 2009, 94 (20)

[5] Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge [J].

Chu, L. K. ;

Lee, W. C. ;

Huang, M. L. ;

Chang, Y. H. ;

Tung, L. T. ;

Chang, C. C. ;

Lee, Y. J. ;

Kwo, J. ;

Hong, M. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :2195-2198

[6] InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS [J].

Hong, M. ;

Kwo, J. ;

Lin, T. D. ;

Huang, M. L. .

MRS BULLETIN, 2009, 34 (07) :514-521

[7] High-k/Ge MOSFETs for future nanoelectronics [J].

Kamata, Yoshiki .

MATERIALS TODAY, 2008, 11 (1-2) :30-38

[8] Advances in high κ gate dielectrics for Si and III-V semiconductors [J].

Kwo, J ;

Hong, M ;

Busch, B ;

Muller, DA ;

Chabal, YJ ;

Kortan, AR ;

Mannaerts, JP ;

Yang, B ;

Ye, P ;

Gossmann, H ;

Sergent, AM ;

Ng, KK ;

Bude, J ;

Schulte, WH ;

Garfunkel, E ;

Gustafsson, T .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :645-650

[9] Molecular beam epitaxy grown Ga2O3(Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics [J].

Lee, C. H. ;

Lin, T. D. ;

Tung, L. T. ;

Huang, M. L. ;

Hong, M. ;

Kwo, J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03) :1128-1131

[10] Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As [J].

Lee, K. Y. ;

Lee, Y. J. ;

Chang, P. ;

Huang, M. L. ;

Chang, Y. C. ;

Hong, M. ;

Kwo, J. .

APPLIED PHYSICS LETTERS, 2008, 92 (25)