Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

被引：3
|
作者：
Guo, H. [1 ]
Andagana, H. B. [1 ]
Cao, X. A. [1 ]
机构：
[1] W Virginia Univ, Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 05期
关键词：
Indium tin oxide; ohmic contact; GaN; LIGHT-EMITTING-DIODES; LOW-RESISTANCE; HIGH-POWER; TRANSPARENT; FILMS;
D O I：
10.1007/s11664-010-1133-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Indium tin oxide (ITO) thin films doped with Au, Ni, or Pt (3.5 at.% to 10.5 at.%) were deposited on p-GaN epilayers (Mg similar to 4 x 10(19) cm(-3)) using direct-current (DC) sputter codeposition. It was found that undoped ITO con- tacts to p-GaN exhibited leaky Schottky behavior, whereas the incorporation of a small amount of Au (3.5 at.% to 10.5 at.%) significantly improved their ohmic characteristics. Compared with standard Ni/ITO contacts, the Au-doped ITO contacts had a similar specific contact resistance in the low 10(-2) Omega cm(-2) range, but were more stable above 600A degrees C and more transparent at blue wavelengths. These results provide support for the use of Au-doped ITO ohmic contact to p-type GaN in high-brightness blue light-emitting diodes.
引用
收藏
页码：494 / 498
页数：5
相关论文
共 50 条
  • [21] Ohmic contact to p-type GaN
    Youn, DH
    Hao, MS
    Sato, H
    Sugahara, T
    Naoi, Y
    Sakai, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 1768 - 1771
  • [22] Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts
    Liu, Shu-Yen
    Ye, Jhao-Cheng
    Lin, Yu-Chuan
    Chang, Kuo-Hua
    Lee, Ming-Lun
    Lai, Wei-Chih
    Sheu, Jinn-Kong
    GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011, 7939
  • [23] Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices
    Puneetha, P. T.
    Reddy, M. Siva Pratap
    Lee, Young-Woong
    Jeong, Seong-Hoon
    Lokanadham, R.
    Park, Chinho
    Pradeep, A. Guru
    Reddy, V. Rajagopal
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (22) : 16903 - 16909
  • [24] A novel transparent ohmic contact of indium tin oxide to n-type GaN
    Hwang, JD
    Yang, GH
    Chang, WT
    Lin, CC
    Chuang, RW
    Chang, SJ
    MICROELECTRONIC ENGINEERING, 2005, 77 (01) : 71 - 75
  • [25] Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2
    Hwang, JD
    Chang, WT
    Hseih, KH
    Yang, GH
    Wu, CY
    Chen, PS
    THIN SOLID FILMS, 2005, 493 (1-2) : 203 - 206
  • [26] Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN
    Ja-Soon Jang
    Dong-Jun Kim
    Seong-Ju Park
    Tae-Yeon Seong
    Journal of Electronic Materials, 2001, 30 : 94 - 98
  • [27] Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN
    Jang, JS
    Kim, DJ
    Park, SJ
    Seong, TY
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (02) : 94 - 98
  • [28] Thermostable ohmic contacts on p-type SiC
    Kassamakova, L
    Kakanakov, R
    Nordell, N
    Savage, S
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 787 - 790
  • [29] Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN
    Kim, JK
    Je, JH
    Lee, JW
    Park, YJ
    Kim, T
    Jung, IO
    Lee, BT
    Lee, JL
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (02) : L8 - L12
  • [30] Nonalloyed ohmic formation for p-type AlGaN with p-type GaN capping layers using ohmic recessed technique
    Lin, YJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (1-3): : L86 - L88
12345