Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

被引：3

作者：

Guo, H. ^{[1
]}

Andagana, H. B. ^{[1
]}

Cao, X. A. ^{[1
]}

机构：

[1] W Virginia Univ, Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 05期

关键词：

Indium tin oxide; ohmic contact; GaN; LIGHT-EMITTING-DIODES; LOW-RESISTANCE; HIGH-POWER; TRANSPARENT; FILMS;

D O I：

10.1007/s11664-010-1133-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium tin oxide (ITO) thin films doped with Au, Ni, or Pt (3.5 at.% to 10.5 at.%) were deposited on p-GaN epilayers (Mg similar to 4 x 10(19) cm(-3)) using direct-current (DC) sputter codeposition. It was found that undoped ITO con- tacts to p-GaN exhibited leaky Schottky behavior, whereas the incorporation of a small amount of Au (3.5 at.% to 10.5 at.%) significantly improved their ohmic characteristics. Compared with standard Ni/ITO contacts, the Au-doped ITO contacts had a similar specific contact resistance in the low 10(-2) Omega cm(-2) range, but were more stable above 600A degrees C and more transparent at blue wavelengths. These results provide support for the use of Au-doped ITO ohmic contact to p-type GaN in high-brightness blue light-emitting diodes.

引用

页码：494 / 498

页数：5

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