Effects of Al pad deformation and TiW barrier layer on copper-to-silicon diffusion and intermetallic compound formation in copper wire bonding

被引：0

作者：

Zhang, Shawn ^{[1
]}

Chen, Catherine ^{[1
]}

Lee, Ricky ^{[1
]}

Lau, Angie K. M. ^{[2
]}

Tsang, Paul P. H. ^{[2
]}

Mohamed, Lebbai ^{[2
]}

Chan, C. Y. ^{[2
]}

Dirkzwager, M. ^{[2
]}

机构：

[1] Hong Kong Univ Sci & Technol, Ctr Adv Microsyst Packaging, Elect Packaging Lab, Kowloon, Hong Kong, Peoples R China

[2] PSCCHK, Kwai Chung, Hong Kong, Peoples R China

来源：

IEEE CPMT: INTERNATIONAL SYMPOSIUM AND EXHIBITION ON ADVANCED PACKAGING MATERIALS: PROCESSES, PROPERTIES AND INTERFACES | 2006年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu wire bonding attracts great attention in recent years due to its many advantages over Au and Al wire bonding. However, Cu is a fast diffuser in Si compared with Au and Al and may impose more threats to Si devices. Therefore, Cu-toSi diffusion and its correlation with intermetallic compound (IMC) formation in wire bonding should be investigated. In this study, Cu-to-Si diffusion and IMC formation are studied in real diode devices. The effect of Al pad deformation to Cu diffusion is investigated with the aid of lab-made multilayer structure. The samples with and without titanium-tungsten (TiW) barrier layer is adopted to study the barrier layer effect. Secondary ion mass spectrometry depth profiling is carried out for diffusion characterization and cross sections of the wire bonded samples are made for IMC observation and measurement.

引用

页码：189 / +

页数：3

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