Remarkable effect of Ni2+ doping on structural, second harmonic generation, optical, mechanical and dielectric properties of KDP single crystals

被引:6
|
作者
Ganesh, V. [1 ]
Shkir, Mohd. [1 ]
AlFaify, S. [1 ]
Algarni, H. [1 ]
Abutalib, M. M. [2 ]
Yahia, I. S. [1 ,3 ]
机构
[1] King Khalid Univ, Fac Sci, Dept Phys, POB 9004, Abha 61413, Saudi Arabia
[2] King Abdulaziz Univ, Fac Sci Al Faisaliah, POB 80200, Jeddah 21589, Saudi Arabia
[3] Ain Shams Univ, Fac Educ, Dept Phys, Nanosci & Semicond Labs,Thin Film Lab, Cairo, Egypt
关键词
Optical materials; Crystal growth; Raman spectroscopy; Defects; Mechanical properties; L-ALANINE; SHG EFFICIENCY; GROWTH; MICROHARDNESS; INDENTATION; PERFECTION; IMPURITIES; SURFACE; SIMULATION; DESIGN;
D O I
10.1016/j.physb.2016.03.004
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The nonlinear optical single crystals of pure and Ni2+ doped potassium dihydrogen phosphate (KDP) were successfully grown by slow evaporation solution growth technique. The effects of the addition of Ni2+ with different molar concentration have been studied by powder X-ray diffraction, FT-Raman, second harmonic generation, microscopic and dielectric studies. Its crystallinity was assessed by the FT Raman technique and its surface, structural imperfections were recorded using high resolution microscope, which clearly reveals that the doping is showing considerable effect on the samples. The SHG measurements also carried out on pure and doped samples, which reveal the relative SHG efficiency has been enhanced due to doping. The optical activities were studied by UV-vis-NIR technique and reveals high optical transparency in doped samples. The remarkable enhancement in mechanical strength was observed due to doping. The enhanced dielectric constant and low dielectric loss confirms that the grown crystals with doping are superior to pure crystals and may be used in optoelectronic devices. (C) 2016 Elsevier B.V. All rights reserved.
引用
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页码:1 / 11
页数:11
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