Growth of thin chalcopyrite CuInSe2 films by the close spaced vapour transport process

被引：1

作者：

Addonizio, ML ^{[1
]}

Loreti, S ^{[1
]}

Agati, A ^{[1
]}

Pellegrino, M ^{[1
]}

Quercia, L ^{[1
]}

Jayaraj, MK ^{[1
]}

Parretta, A ^{[1
]}

机构：

[1] COCHIN UNIV SCI & TECHNOL,DEPT PHYS,COCHIN 682022,KERALA,INDIA

来源：

ADVANCES IN CRYSTAL GROWTH | 1996年 / 203卷

关键词：

CuInSe2; copper selenides; selenization; CSVT;

D O I：

10.4028/www.scientific.net/MSF.203.149

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The morphological and structural properties of copper-indium alloys selenized in a box have been studied varying the temperature and duration of the selenization process. At temperatures greater than or equal to 375 degrees C a single phase CuInSe2 is obtained with an indium-rich precursor. At lower temperatures different copper selenides are found which affect in a different way the composition of the film. A high indium loss is found in the 250-300 degrees C range. The results on short selenization cycles are used to identify the precursor species of CuInSe2.

引用

页码：149 / 154

页数：6