Advances in Patterning Materials for 193 nm Immersion Lithography

被引:231
作者
Sanders, Daniel P. [1 ]
机构
[1] IBM Almaden Res Ctr, San Jose, CA 95136 USA
关键词
CHEMICAL AMPLIFICATION RESISTS; REFRACTIVE-INDEX FLUID; INTERFACIAL MASS-TRANSFER; DEPTH PROFILE ANALYSIS; OPTICAL LITHOGRAPHY; SURFACE-PROPERTIES; IMAGING MATERIALS; AMPLIFIED RESIST; AIR BUBBLE; ORGANIC PHOTOCONTAMINATION;
D O I
10.1021/cr900244n
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The advancements in optical lithography tools, processes, and patterning materials which are critical to the continued performance increases of semiconductor devices as well as to the overall economics of the semiconductor industry have been reported. the development of high index immersion lithography, including progress in high refractive index lens materials, high refractive index immersion fluids, and high refractive index photoresists. The minimum resolution such as critical dimension or minimum half-pitch that can be achieved by a lithographic process is described by the Rayleigh equation. The chemists and engineers rely on the accumulated knowledge of the interaction of water with lithographic materials and build upon the available materials and process-based mitigation strategies to design double-exposure materials and double-patterning processes that are compatible with immersion lithography.
引用
收藏
页码:321 / 360
页数:40
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