Advances in Patterning Materials for 193 nm Immersion Lithography

被引:222
|
作者
Sanders, Daniel P. [1 ]
机构
[1] IBM Almaden Res Ctr, San Jose, CA 95136 USA
关键词
CHEMICAL AMPLIFICATION RESISTS; REFRACTIVE-INDEX FLUID; INTERFACIAL MASS-TRANSFER; DEPTH PROFILE ANALYSIS; OPTICAL LITHOGRAPHY; SURFACE-PROPERTIES; IMAGING MATERIALS; AMPLIFIED RESIST; AIR BUBBLE; ORGANIC PHOTOCONTAMINATION;
D O I
10.1021/cr900244n
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The advancements in optical lithography tools, processes, and patterning materials which are critical to the continued performance increases of semiconductor devices as well as to the overall economics of the semiconductor industry have been reported. the development of high index immersion lithography, including progress in high refractive index lens materials, high refractive index immersion fluids, and high refractive index photoresists. The minimum resolution such as critical dimension or minimum half-pitch that can be achieved by a lithographic process is described by the Rayleigh equation. The chemists and engineers rely on the accumulated knowledge of the interaction of water with lithographic materials and build upon the available materials and process-based mitigation strategies to design double-exposure materials and double-patterning processes that are compatible with immersion lithography.
引用
收藏
页码:321 / 360
页数:40
相关论文
共 50 条
  • [1] Advanced materials for 193 nm immersion lithography
    Kusumoto, S
    Shima, M
    Wang, Y
    Shimokawa, T
    Sato, H
    Hieda, K
    POLYMERS FOR ADVANCED TECHNOLOGIES, 2006, 17 (02) : 122 - 130
  • [2] Synthesis of fluorinated materials for 193 nm immersion lithography and 157 nm lithography
    Yamashita, T
    Ishikawa, T
    Yoshida, T
    Hayamai, T
    Araki, T
    Aoyama, H
    Hagiwara, T
    Itani, Z
    Fujii, Z
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (05) : 631 - 639
  • [3] Circular apertures for contact hole patterning in 193 nm immersion lithography
    Tay, C. J.
    Quan, C.
    Ling, M. L.
    Chua, G. S.
    Tan, S. K.
    Lin, Q.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (02):
  • [4] High-index materials for 193 nm immersion lithography
    Burnett, JH
    Kaplan, SG
    Shirley, EL
    Tompkins, PJ
    Webb, JE
    OPTICAL MICROLITHOGRAPHY XVIII, PTS 1-3, 2005, 5754 : 611 - 621
  • [5] Radial segmentation approach for contact hole patterning in 193 nm immersion lithography
    Ling, Moh Lung
    Chua, Gek Soon
    Tan, Sia Kim
    Tay, Cho Jui
    Quan, Chenggen
    Lin, Qunying
    OPTICAL MICROLITHOGRAPHY XXIII, 2010, 7640
  • [6] Circular apertures for contact hole patterning in 193nm immersion lithography
    Tay, Cho Jui
    Quan, Chenggen
    Ling, Moh Lung
    Lin, Qunying
    Tan, Sia Kim
    Chua, Gek Soon
    FOURTH INTERNATIONAL CONFERENCE ON EXPERIMENTAL MECHANICS, 2010, 7522
  • [7] Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography
    Yamashita, T
    Ishikawa, T
    Yoshida, T
    Hayamai, I
    Araki, T
    Aoyama, H
    Hagiwara, T
    Itani, T
    Fujii, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 564 - 571
  • [8] Development of novel materials for 193-nm dry and immersion lithography
    Sasaki, Takashi
    Shirota, Naoko
    Wang, Shu-Zhong
    Takebe, Yoko
    Yokokoji, Osamu
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2006, 19 (05) : 573 - 578
  • [9] High-Index fluoride materials for 193 nm immersion lithography
    Nawata, Teruhiko
    Inui, Yoji
    Masada, Isao
    Nishijima, Eiichi
    Mabuchi, Toshiro
    Mochizuki, Naoto
    Satoh, Hiroki
    Fukuda, Tsuguo
    OPTICAL MICROLITHOGRAPHY XX, PTS 1-3, 2007, 6520
  • [10] High-index fluoride materials for 193 nm immersion lithography
    Nawata, T.
    Inui, Y.
    Masada, I.
    Nishijima, E.
    Satoh, H.
    Fukuda, T.
    OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 2006, 6154 : U557 - U563