Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs

被引：3

作者：

Massengale, AR ^{[1
]}

Ueda, T

Harris, JS

Tai, CY

Deal, MD

Plummer, JD

Fernandez, R

机构：

[1] Stanford Univ, Ctr Integrated Syst, Solid State Elect Lab, Stanford, CA 94305 USA

[2] Stanford Univ, Ctr Integrated Syst, Integrated Circuits Lab, Stanford, CA 94305 USA

[3] Lockheed Martin Adv Tech Ctr, Palo Alto, CA 94304 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 12期

关键词：

aluminium compounds; impurities;

D O I：

10.1049/el:19970734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lateral oxidation of AlAs is becoming an important processing tool, but has proven difficult to control. A method is presented to achieve lithographic control of the lateral oxidation process. The technique uses impurity induced layer disordering in buried, heavily Si-doped layers to locally change the oxidation rate of an AlAs layer. Several types of capping conditions during the anneal are discussed.

引用

页码：1087 / 1089

页数：3

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