Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation

被引:2
作者
Li, Yiming [1 ,2 ,3 ]
机构
[1] Natl Chiao Tung Univ, Inst Commun Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[3] Natl Nano Device Labs, Hsinchu 300, Taiwan
关键词
Nonlinear circuit model; MOSFET device; Ordinary differential equation; Monotone iterative method;
D O I
10.1016/j.mcm.2009.08.018
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
In this paper, we model the metal-oxide-semiconductor field effect transistor (MOSFET) radio frequency (RF) circuit as a system of nonlinear ordinary differential equations. Then we solve them with the waveform relaxation method, the monotone iterative method, and Runge-Kutta method directly in time domain. With the monotone iterative method, we prove that each decoupled and transformed circuit equation converges monotonically. In comparison with the HSPICE outputs, results calculated with our method are stable and robust in both the time and frequency domains. Convergence properties for the monotone iterative and outer iterative loops are also presented and discussed. This method provides an alternative in the time domain numerical solution of MOSFET RF circuit equations. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:320 / 328
页数:9
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