Nitrogen implantation -: an alternative technique to reduce traps at SiC/SiO2-interfaces

被引：18

作者：

Ciobanu, Florin

Frank, Thomas

Pensl, Gerhard

Afanas'ev, Valery V.

Shamuilia, Sheron

Schoner, Adolf

Kimoto, Tsunenobu

机构：

[1] Univ Erlangen Nurnberg, Inst Appl Phys, DE-91058 Erlangen, Germany

[2] Katholieke Univ Leuven, Dept Phys, BE-3001 Louvain, Belgium

[3] ACREO AB, S-16440 Kista, Sweden

[4] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷

关键词：

interface traps; nitrogen implantation; oxidation; MOS capacitor;

D O I：

10.4028/www.scientific.net/MSF.527-529.991

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/p-type 4H-SiC epilayers prior to a standard oxidation process. The corresponding MOS capacitors are investigated by conductance and internal photoemission spectroscopy. The effect of N-implantation on the density of interface traps D(it) is studied and a model is proposed, which consistently explains the observed results.

引用

页码：991 / 994

页数：4

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