RECRYSTALLIZATION OF Ge FOR III-V PHOTOVOLTAIC SUBSTRATES

被引：0
|
作者：
McNatt, Jeremiah [1 ]
Raffaelle, Ryne [2 ]
Pal, AnnaMaria [1 ]
Forbes, David [2 ]
Maurer, William [3 ]
机构：
[1] NASA Glenn Res Ctr, Cleveland, OH USA
[2] Rochester Inst Technol, Rochester, NY USA
[3] Ohio Aerosp Inst, Brookpark, OH USA
来源：
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Amorphous germanium (Ge) is RF sputtered onto 25 mu m thick molybdenum (Mo) foils and recrystallized at 675 degrees C under an AsH3 environment. After annealing, the Ge is polycrystalline with grain boundary regions that range from 1 um(2) to 0.5 cm(2). The polycrystalline surface behaves electrically much like that of commercial single crystal Ge. This polycrystalline Ge on thin Mo foil will serve as a substrate for a high efficient, high mass-specific-power, photovoltaic device.
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页码：1117 / +
页数：2
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