RECRYSTALLIZATION OF Ge FOR III-V PHOTOVOLTAIC SUBSTRATES

被引：0

作者：

McNatt, Jeremiah ^{[1
]}

Raffaelle, Ryne ^{[2
]}

Pal, AnnaMaria ^{[1
]}

Forbes, David ^{[2
]}

Maurer, William ^{[3
]}

机构：

[1] NASA Glenn Res Ctr, Cleveland, OH USA

[2] Rochester Inst Technol, Rochester, NY USA

[3] Ohio Aerosp Inst, Brookpark, OH USA

来源：

2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Amorphous germanium (Ge) is RF sputtered onto 25 mu m thick molybdenum (Mo) foils and recrystallized at 675 degrees C under an AsH3 environment. After annealing, the Ge is polycrystalline with grain boundary regions that range from 1 um(2) to 0.5 cm(2). The polycrystalline surface behaves electrically much like that of commercial single crystal Ge. This polycrystalline Ge on thin Mo foil will serve as a substrate for a high efficient, high mass-specific-power, photovoltaic device.

引用

页码：1117 / +

页数：2

共 50 条

[21] Impact of III-V and Ge Devices on Circuit Performance
Park, Jeongha
Oh, Saeroonter
Kim, SoYoung
Wong, H. -S. Philip
Wong, S. Simon
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2013, 21 (07) : 1189 - 1200
[22] Ge/III-V Channel Engineering for future CMOS
Takagi, S.
Sugiyama, M.
Yasuda, T.
Takenaka, M.
GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 9 - +
[23] III-V/Ge-based Tunneling MOSFET
Takagi, S.
Ahn, D. -H.
Gotow, T.
Nishi, K.
Bae, T. -E.
Katoh, T.
Matsumura, R.
Takaguchi, R.
Kato, K.
Takenaka, M.
2017 FIFTH BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS & STEEP TRANSISTORS WORKSHOP (E3S), 2017,
[24] Surface Defects and Passivation of Ge and III-V Interfaces
Houssa, Michel
Chagarov, Evgueni
Kummel, Andrew
MRS BULLETIN, 2009, 34 (07) : 504 - 513
[25] Ge concentrator cells for III-V multijunction devices
Friedman, DJ
Olson, JM
Ward, S
Moriarty, T
Emery, K
Kurtz, S
Duda, A
King, RR
Cotal, HL
Lillington, DR
Ermer, JH
Karam, NH
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 965 - 967
[26] III-V/Ge Channel Engineering for Future CMOS
Wistey, M. A.
Singisetti, U.
Burek, G. J.
Kim, E.
Thibeault, B. J.
Nelson, A.
Cagnon, J.
Lee, Y. -J.
Bank, S. R.
Stemmer, S.
McIntyre, P. C.
Gossard, A. C.
Rodwel, M. J. W.
GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 361 - +
[27] The potential of III-V semiconductors as terrestrial photovoltaic devices
Bosi, Matteo
Pelosi, Claudio
PROGRESS IN PHOTOVOLTAICS, 2007, 15 (01): : 51 - 68
[28] Defects at Ge/oxide and III-V/oxide interfaces
Van de Walle, C. G.
Choi, M.
Weber, J. R.
Lyons, J. L.
Janotti, A.
MICROELECTRONIC ENGINEERING, 2013, 109 : 211 - 215
[29] Advances in the development of high efficiency III-V multijunction solar cells on Ge|Si virtual substrates
Orejuela, Victor
Garcia, Ivan
Sanchez, Clara
Hinojosa, Manuel
Dadgostar, Shabnam
Ghosh, Monalisa
Roca i Cabarrocas, Pere
Rey-Stolle, Ignacio
PROCEEDINGS OF THE 2021 13TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2021, : 27 - 31
[30] Photovoltaics on Transfer Printed III-V Virtual Substrates
Schmieder, Kenneth J.
Lumb, Matthew P.
Bennett, Mitchell F.
Tomasulo, Stephanie
Yakes, Michael K.
Mack, Shawn
Moore, James E.
Walters, Robert J.
IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 8 (06): : 1641 - 1646

← 1 2 3 4 5 →