RECRYSTALLIZATION OF Ge FOR III-V PHOTOVOLTAIC SUBSTRATES

被引：0

作者：

McNatt, Jeremiah ^{[1
]}

Raffaelle, Ryne ^{[2
]}

Pal, AnnaMaria ^{[1
]}

Forbes, David ^{[2
]}

Maurer, William ^{[3
]}

机构：

[1] NASA Glenn Res Ctr, Cleveland, OH USA

[2] Rochester Inst Technol, Rochester, NY USA

[3] Ohio Aerosp Inst, Brookpark, OH USA

来源：

2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Amorphous germanium (Ge) is RF sputtered onto 25 mu m thick molybdenum (Mo) foils and recrystallized at 675 degrees C under an AsH3 environment. After annealing, the Ge is polycrystalline with grain boundary regions that range from 1 um(2) to 0.5 cm(2). The polycrystalline surface behaves electrically much like that of commercial single crystal Ge. This polycrystalline Ge on thin Mo foil will serve as a substrate for a high efficient, high mass-specific-power, photovoltaic device.

引用

页码：1117 / +

页数：2

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