Photon recycling characteristics of InGaAs/GaAsP multiple quantum well solar cells incorporating a spectrally selective filter and distributed Bragg reflector

被引:7
作者
Hong, Chung-Yu [1 ]
Wang, Yi-Chin [1 ]
Su, Yu-Chih [1 ]
Tsai, Jia-Ling [1 ]
Tung, Chao-Ming [1 ]
Tsai, Min-An [2 ]
Ghi, Guo-Chung [1 ]
Yu, Peichen [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Ind Technol Res Inst, Ctr Measurement Stand, Photovolta Metrol Lab, Hsinchu 310, Taiwan
关键词
EFFICIENCY; DESIGN;
D O I
10.1364/OE.27.036046
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Photon management plays a vital role in the power conversion efficiency of III-V semiconductor solar cells. However, the photon recycling characteristics of GaAs-based multi-quantum-well (MQW) solar cells employed different optical designs had yet been fully explored. In this work, we investigate the impact of the spectrally selective filter (SSF) and distributed Bragg reflector (DBR) on the photovoltaic characteristics of single-junction, strain-balanced In0.1Ga0.9As/ GaAs0.85P0.15 MQW solar cells. Specifically, the SSFs with cutoff wavelengths of 880, 910, and 940 nm are designed and implemented on MQW solar cells with and without the incorporation of a rear DBR. Photon confinement in the vertical direction is verified based on the characterizations of reflectance, electroluminescence, and external quantum efficiency. We show that the photon confinement reduces the saturation current density, up to 26 times and 3 times for the 880 nm SSF-MQW and SSF-MQW-DBR devices, respectively, compared to that of the 940 nm devices. Furthermore, by comparing the SSF-MQW-DBR solar cells under simulated one-sun and concentrated illumination conditions, the open-circuit voltage exhibits a maximal net increase for the 910 nm SSF due to tradeoff between the short-circuit and saturation current density. The proposed SSF design may offer a viable approach to boost the performance of GaAs-based MQW solar cells. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:36046 / 36058
页数:13
相关论文
共 33 条
[1]   Dependence of device performance on carrier escape sequence in multi-quantum-well p-i-n solar cells [J].
Alemu, A. ;
Coaquira, J. A. H. ;
Freundlich, A. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
[2]  
[Anonymous], P IEEE C 37 IEEE PHO
[3]  
[Anonymous], P IEEE C 40 IEEE PHO
[4]   Recent results on quantum well solar cells [J].
Barnham, KWJ ;
Ballard, I ;
Connolly, JG ;
Ekins-Daukes, N ;
Kluftinger, BG ;
Nelson, J ;
Rohr, C ;
Mazzer, M .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2000, 11 (07) :531-536
[5]   Absorption enhancement through Fabry-Perot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell [J].
Behaghel, B. ;
Tamaki, R. ;
Vandamme, N. ;
Watanabe, K. ;
Dupuis, C. ;
Bardou, N. ;
Sodabanlu, H. ;
Cattoni, A. ;
Okada, Y. ;
Sugiyama, M. ;
Collin, S. ;
Guillemoles, J-F. .
APPLIED PHYSICS LETTERS, 2015, 106 (08)
[6]   Triple-Junction Quantum-Well Solar Cells In Commercial Production [J].
Browne, Ben ;
Lacey, Jon ;
Tibbits, Thomas ;
Bacchin, Gianluca ;
Wu, Ta-Chung ;
Liu, James Q. ;
Chen, Xiaodong ;
Rees, Victoria ;
Tsai, Jane ;
Werthen, Jan-Gustav .
9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-9), 2013, 1556 :3-5
[7]   Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications [J].
Bushnell, DB ;
Ekins-Daukes, NJ ;
Barnham, KWJ ;
Connolly, JP ;
Roberts, JS ;
Hill, G ;
Airey, R ;
Mazzer, M .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (1-2) :299-305
[8]   EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].
CHEUNG, SK ;
CHEUNG, NW .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87
[9]  
Dittrich T., 2014, Materials Concepts for Solar Cells
[10]   Strain-balanced GaAsP/InGaAs quantum well solar cells [J].
Ekins-Daukes, NJ ;
Barnham, KWJ ;
Connolly, JP ;
Roberts, JS ;
Clark, JC ;
Hill, G ;
Mazzer, M .
APPLIED PHYSICS LETTERS, 1999, 75 (26) :4195-4197