Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

被引：3

作者：

Liang, F. ^{[1
]}

Chen, P. ^{[1
]}

Zhao, D. G. ^{[1
]}

Jiang, D. S. ^{[1
]}

Liu, Z. S. ^{[1
]}

Zhu, J. J. ^{[1
]}

Yang, J. ^{[1
]}

Liu, W. ^{[1
]}

He, X. G. ^{[1
]}

Li, X. J. ^{[1
]}

Li, X. ^{[1
]}

Liu, S. T. ^{[1
]}

Yang, H. ^{[2
]}

Zhang, L. Q. ^{[2
]}

Liu, J. P. ^{[2
]}

Zhang, Y. T. ^{[3
]}

Du, G. T. ^{[3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[3] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2016年 / 651卷

基金：

中国国家自然科学基金;

关键词：

NEGATIVE ELECTRON-AFFINITY; ALUMINUM NITRIDE; CARBON NANOTUBES; GALLIUM;

D O I：

10.1016/j.cplett.2016.03.034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A large field emission current density of 2.55 A/cm(2) at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：76 / 79

页数：4