Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

被引：3
|
作者：
Liang, F. [1 ]
Chen, P. [1 ]
Zhao, D. G. [1 ]
Jiang, D. S. [1 ]
Liu, Z. S. [1 ]
Zhu, J. J. [1 ]
Yang, J. [1 ]
Liu, W. [1 ]
He, X. G. [1 ]
Li, X. J. [1 ]
Li, X. [1 ]
Liu, S. T. [1 ]
Yang, H. [2 ]
Zhang, L. Q. [2 ]
Liu, J. P. [2 ]
Zhang, Y. T. [3 ]
Du, G. T. [3 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
[3] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2016年 / 651卷
基金：
中国国家自然科学基金;
关键词：
NEGATIVE ELECTRON-AFFINITY; ALUMINUM NITRIDE; CARBON NANOTUBES; GALLIUM;
D O I：
10.1016/j.cplett.2016.03.034
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A large field emission current density of 2.55 A/cm(2) at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：76 / 79
页数：4
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