Electrically Addressable Multistate Volatile Memory with Flip-Flop and Flip-Flap-Flop Logic Circuits on a Solid Support

被引：90

作者：

de Ruiter, Graham ^{[1
]}

Motiei, Leila ^{[1
]}

Choudhury, Joyanta ^{[1
]}

Oded, Noa ^{[2
]}

van der Boom, Milko E. ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Organ Chem, IL-76100 Rehovot, Israel

[2] Weizmann Inst Sci, Dept Comp Sci & Appl Math, IL-76100 Rehovot, Israel

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2010年 / 49卷 / 28期

基金：

以色列科学基金会;

关键词：

Boolean logic; molecular devices; osmium; surface chemistry; thin films; MOLECULAR KEYPAD LOCK; CHEMICAL COMMUNICATION; OPERATIONS; MONOLAYERS; SYSTEM; GATES; ELEMENTS; DEVICES;

D O I：

10.1002/anie.201000785

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Chemical Equation Presentation Flip-flopping away: Multivalue random access memory can be achieved using electrically addressable Os2+-based multilayers. The controllable optical properties of the multilayers allow the construction of memory devices that are able to store up to five different states that depend on the given electrical inputs (see picture). The functions of the devices can be represented by sequential logic circuits that are equivalent to flip-flop and flipflap-flop devices. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4780 / 4783

页数：4

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