Improved Electro-Thermal Model Incorporating Device Aging Effect Towards Accurate Temperature Tracking in Electric Motor Drives

被引:1
作者
Kundu, Animesh [1 ]
Korta, Philip [1 ]
Balamurali, Aiswarya [1 ]
Iyer, Lakshmi, V [2 ]
Kar, Narayan C. [1 ]
机构
[1] Univ Windsor, Elect & Comp Engn, Windsor, ON, Canada
[2] Magna Int Inc, Corp Engn & R&D, Troy, MI USA
来源
2021 24TH INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2021) | 2021年
关键词
Aging; characterization; electro-thermal model; loss model; lifetime estimation; thermal model; JUNCTION TEMPERATURE; IGBT; MODULES;
D O I
10.23919/ICEMS52562.2021.9634576
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Accurate electro-thermal models are imperative for device junction temperature determination. Existing research focuses on electro-thermal model development based on the device V-I characteristics in a healthy condition; however, it is important to observe the change in device characteristics in a degraded state as well to accommodate the change in temperature sensitive parameters such as collector-emitter voltage, resistance, and energy dissipation. Therefore, this paper develops an advanced electro-thermal model incorporating device aging effects. Initially, the device loss model is developed considering temperature sensitive electrical parameters. Subsequently, towards accurate junction temperature estimation, a novel thermal network model considering the thermal expansion due to device aging is derived. The proposed methodology is validated using a 100 kW inverter.
引用
收藏
页码:1037 / 1042
页数:6
相关论文
共 19 条
[1]   A Review on IGBT Module Failure Modes and Lifetime Testing [J].
Abuelnaga, Ahmed ;
Narimani, Mehdi ;
Bahman, Amir Sajjad .
IEEE ACCESS, 2021, 9 :9643-9663
[2]  
Ali Syed H., 2016, IEEE ENERGY CONVERSI
[3]   Electrothermal-Based Junction Temperature Estimation Model for Converter of Switched Reluctance Motor Drive System [J].
Chen, Hao ;
Yang, Jian ;
Xu, Shuai .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2020, 67 (02) :874-883
[4]   A MOSFET SPICE Model With Integrated Electro-Thermal Averaged Modeling, Aging, and Lifetime Estimation [J].
Cheng, Tian ;
Lu, Dylan Dah-Chuan ;
Siwakoti, Yam P. .
IEEE ACCESS, 2021, 9 :5545-5554
[5]   Strategy for Diagnosing the Aging of an IGBT Module by ON-State Voltage Separation [J].
Du, Mingxing ;
Kong, Qingyi ;
Ouyang, Ziwei ;
Wei, Kexin ;
Hurley, William G. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (11) :4858-4864
[6]   Wear-Out Condition Monitoring of IGBT and MOSFET Power Modules in Inverter Operation [J].
Gonzalez-Hernando, Fernando ;
San-Sebastian, Jon ;
Garcia-Bediaga, Asier ;
Arias, Manuel ;
Iannuzzo, Francesco ;
Blaabjerg, Frede .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2019, 55 (06) :6184-6192
[7]   A Thermal Estimation Method for IGBT Module Adaptable to Operating Conditions [J].
Guo, Weisheng ;
Ma, Mingyao ;
Wang, Hai ;
Yang, Shuying ;
Zhang, Xing ;
Yan, Xuesong ;
Chen, Wenjie ;
Cai, Guoqing .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (06) :6147-6152
[8]   Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors [J].
Liu, Xiangxiang ;
Jiao, Tianlei ;
Das, Diganta ;
Naqvi, Ijaz Haider ;
Pecht, Michael .
IEEE ACCESS, 2021, 9 :95304-95316
[9]   A Three-Dimensional Boundary-Dependent Compact Thermal Network Model for IGBT Modules in New Energy Vehicles [J].
Ma, Mingyao ;
Guo, Weisheng ;
Yan, Xuesong ;
Yang, Shuying ;
Zhang, Xing ;
Chen, Wenjie ;
Cai, Guoqing .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2021, 68 (06) :5248-5258
[10]   Electrothermal Cosimulation for Predicting the Power Loss and Temperature of SiC MOSFET Dies Assembled in a Power Module [J].
Nakamura, Yohei ;
Evans, Tristan M. ;
Kuroda, Naotaka ;
Sakairi, Hiroyuki ;
Nakakohara, Yusuke ;
Otake, Hirotaka ;
Nakahara, Ken .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (03) :2950-2958