Distinct Photoluminescence in Multilayered van der Waals Heterostructures of MoS2/WS2/ReS2 and BN

被引：9

作者：

Bhat, Usha ^{[1
]}

Singh, Rajendra ^{[1
]}

Vishal, Badri ^{[1
]}

Sharma, Ankit ^{[1
]}

Horta, Sharona ^{[1
]}

Sahu, Rajib ^{[1
]}

Datta, Ranjan ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 07期

关键词：

BN; photoluminescence; pulsed laser deposition; transition metal dichalcogenide; vdW heterostructures; TRANSITION-METAL DICHALCOGENIDES; CHEMICAL-VAPOR-DEPOSITION; HEXAGONAL BORON-NITRIDE; INPLANE HETEROSTRUCTURES; THIN-FILM; C-BN; ELECTRONICS; MOS2; GROWTH; MONOLAYERS;

D O I：

10.1002/pssb.201700691

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Van der Waals heterostructures of (TMDL=1/BNL=1-4/TMDL=1/BNL=1-4), [TMD=MoS2, WS2, and ReS2] are grown on c-plane sapphire substrate by pulsed laser deposition (PLD) under slow kinetic condition. The heterostructure systems show strong emission around 2.3eV and subsidiary peaks around 2.8, 1.9, 1.7, and 1.5eV. BN and transition metal dichalcogenides (TMDs) form type-I heterojunction and the emission peaks observed are explained in terms of various band to band recombination processes and considering relative orientation of Brillouin zones. The emission peak around 2.3eV is promising for solar and photovoltaic applications. The observation is almost similar for three different heterostructure systems.

引用

页数：7

共 57 条

[11] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[12] Layer specific optical band gap measurement at nanoscale in MoS2 and ReS2 van der Waals compounds by high resolution electron energy loss spectroscopy [J].

Dileep, K. ;

Sahu, R. ;

Sarkar, Sumanta ;

Peter, Sebastian C. ;

Datta, R. .

JOURNAL OF APPLIED PHYSICS, 2016, 119 (11)

[13] First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers [J].

Ding, Yi ;

Wang, Yanli ;

Ni, Jun ;

Shi, Lin ;

Shi, Siqi ;

Tang, Weihua .

PHYSICA B-CONDENSED MATTER, 2011, 406 (11) :2254-2260

[14] Superhard nanocomposite of dense polymorphs of boron nitride: Noncarbon material has reached diamond hardness [J].

Dubrovinskaia, Natalia ;

Solozhenko, Vladimir L. ;

Miyajima, Nobuyoshi ;

Dmitriev, Vladimir ;

Kurakevych, Oleksandr O. ;

Dubrovinsky, Leonid .

APPLIED PHYSICS LETTERS, 2007, 90 (10)

[15] Two-Dimensional Crystals: Managing Light for Optoelectronics [J].

Eda, Goki ;

Maier, Stefan A. .

ACS NANO, 2013, 7 (07) :5660-5665

[16] Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides [J].

Fang, Hui ;

Battaglia, Corsin ;

Carraro, Carlo ;

Nemsak, Slavomir ;

Ozdol, Burak ;

Kang, Jeong Seuk ;

Bechtel, Hans A. ;

Desai, Sujay B. ;

Kronast, Florian ;

Unal, Ahmet A. ;

Conti, Giuseppina ;

Conlon, Catherine ;

Palsson, Gunnar K. ;

Martin, Michael C. ;

Minor, Andrew M. ;

Fadley, Charles S. ;

Yablonovitch, Eli ;

Maboudian, Roya ;

Javey, Ali .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2014, 111 (17) :6198-6202

[17]

Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]

[18] Artificially Stacked Atomic Layers: Toward New van der Waals Solids [J].

Gao, Guanhui ;

Gao, Wei ;

Cannuccia, E. ;

Taha-Tijerina, Jaime ;

Balicas, Luis ;

Mathkar, Akshay ;

Narayanan, T. N. ;

Liu, Zhen ;

Gupta, Bipin K. ;

Peng, Juan ;

Yin, Yansheng ;

Rubio, Angel ;

Ajayan, Pulickel M. .

NANO LETTERS, 2012, 12 (07) :3518-3525

[19] Nanostructured metal chalcogenides: synthesis, modification, and applications in energy conversion and storage devices [J].

Gao, Min-Rui ;

Xu, Yun-Fei ;

Jiang, Jun ;

Yu, Shu-Hong .

CHEMICAL SOCIETY REVIEWS, 2013, 42 (07) :2986-3017

[20]

Georgiou T, 2013, NAT NANOTECHNOL, V8, P100, DOI [10.1038/nnano.2012.224, 10.1038/NNANO.2012.224]

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