Distinct Photoluminescence in Multilayered van der Waals Heterostructures of MoS2/WS2/ReS2 and BN

被引：9
作者：
Bhat, Usha [1 ]
Singh, Rajendra [1 ]
Vishal, Badri [1 ]
Sharma, Ankit [1 ]
Horta, Sharona [1 ]
Sahu, Rajib [1 ]
Datta, Ranjan [1 ]
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 07期
关键词：
BN; photoluminescence; pulsed laser deposition; transition metal dichalcogenide; vdW heterostructures; TRANSITION-METAL DICHALCOGENIDES; CHEMICAL-VAPOR-DEPOSITION; HEXAGONAL BORON-NITRIDE; INPLANE HETEROSTRUCTURES; THIN-FILM; C-BN; ELECTRONICS; MOS2; GROWTH; MONOLAYERS;
D O I：
10.1002/pssb.201700691
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Van der Waals heterostructures of (TMDL=1/BNL=1-4/TMDL=1/BNL=1-4), [TMD=MoS2, WS2, and ReS2] are grown on c-plane sapphire substrate by pulsed laser deposition (PLD) under slow kinetic condition. The heterostructure systems show strong emission around 2.3eV and subsidiary peaks around 2.8, 1.9, 1.7, and 1.5eV. BN and transition metal dichalcogenides (TMDs) form type-I heterojunction and the emission peaks observed are explained in terms of various band to band recombination processes and considering relative orientation of Brillouin zones. The emission peak around 2.3eV is promising for solar and photovoltaic applications. The observation is almost similar for three different heterostructure systems.
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页数：7
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