Tailoring electronic structure of organic host for high-performance phosphorescent organic light-emitting diodes

被引:9
作者
Xiao, Jing [1 ]
Liu, Xiao-Ke [2 ,3 ]
Wang, Xin-Xin [4 ,5 ]
Zheng, Cai-Jun [2 ,3 ]
Li, Feng [1 ]
机构
[1] Taishan Univ, Coll Phys & Elect Engn, Tai An 271021, Shandong, Peoples R China
[2] Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China
[4] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[5] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Phosphorescent organic light-emitting diodes; Novel 1,3,5-triazine derivatives; Iridium complexes; Energy-transfer; Bipolar carrier mobility; IRIDIUM COMPLEXES; ENERGY-TRANSFER; ELECTROLUMINESCENCE PROPERTIES; ELECTROPHOSPHORESCENT DEVICES; QUANTUM EFFICIENCY; EMISSION; RED; LAYER; VOLTAGES; FACILE;
D O I
10.1016/j.orgel.2014.08.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated highly efficient phosphorescent organic light-emitting diodes (PHOLEDs) based on three novel 1,3,5-triazine derivatives as the host materials and two kinds of iridium complexes as the guests, respectively. For comparison, the devices using a common phosphorescent host 4,4'-N,N'-dicarbazolebiphenyl (CBP) have also been fabricated. Results show that the devices using 9-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-9H-carbazole (PTC) and 4-(4,6-diphenoxy-1,3,5-triazin-2-yl)-N,N-diphenylaniline (POTA) as host have better performance than that of CBP. In comparison with the PHOLEDs based on CBP host, PTC- and POTA-based PHOLEDs show significantly lower driving voltages and higher power efficiencies. The high bipolar carrier mobility of the host is found to be critical to this kind of doping system, which would balance the injection of both carriers and improve efficiency. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:2763 / 2768
页数:6
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