ELECTRICAL AND OPTICAL PERFORMANCE OF INAS / ALSB / GASB SUPERLATTICE PHOTODETECTOR

被引：0

作者：

Hostut, Mustafa ^{[1
]}

Tansel, Tunay ^{[2
]}

Ergun, Yuksel ^{[3
]}

Kilic, Abidin ^{[3
]}

Aydinli, Atilla ^{[4
]}

机构：

[1] Akdeniz Univ, Dept Sch Sci & Math 2, Div Phys Educ, TR-07058 Antalya, Turkey

[2] Hacettepe Univ, Inst Nucl Sci, TR-06100 Ankara, Turkey

[3] Univ Anadolu, Dept Phys, Eskisehir, Turkey

[4] Bilkent Univ, Dept Phys, Ankara, Turkey

来源：

NANOCON 2015: 7TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION | 2015年

关键词：

Superlattice; dark current; detectivity; GaSb/InAs Infrared detectors;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on electrical and optical performance of InAs/AlSb/GaSb type-II superlattice photodetectors. The detector structure is designed to operate in the MWIR domain with a cut-off wavelength of 4.3 mu m at 125 K. The photodiode exhibits a dark current density of 1 x 10(-10) A/cm(2) with a corresponding differential resistance area product (R(o)A) of 6 x 10(6) Omega cm(2) at 77K and zero bias. We analysed dinamic resistance are product (R(d)A) vs inverse temperature curves in each operating temperature range. The results show that the SL photodiode reveals diffusion limited behaviour at high temperatures and becomes generation-recombination (GR) limited below 125 K. Such results are discussed with extracted minority carrier lifetimes from J-V curve fitting.

引用

页码：255 / 259

页数：5

共 4 条

[1] Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain [J].