Positioning effects on quantum dot solar cells grown by molecular beam epitaxy

被引：34

作者：

Zhou, D. ^{[1
]}

Vullum, P. E. ^{[2
]}

Sharma, G. ^{[1
]}

Thomassen, S. F. ^{[2
]}

Holmestad, R. ^{[2
]}

Reenaas, T. W. ^{[2
]}

Fimland, B. O. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, NTNU, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

[2] Norwegian Univ Sci & Technol, NTNU, Dept Phys, NO-7491 Trondheim, Norway

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

current density; III-V semiconductors; molecular beam epitaxial growth; nanopositioning; photoconductivity; photovoltaic effects; semiconductor quantum dots; solar cells;

D O I：

10.1063/1.3309411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report current-voltage and spectral response characteristics of high density InAs/GaAs quantum dot (QD) solar cells with different positions where dots are located. The short circuit current density (J(sc)), open circuit voltage (V(oc)), and external quantum efficiency of these cells under air mass 1.5 are presented and compared with a GaAs reference cell. An extended photoresponse in contrast to the GaAs reference cell was confirmed for all these cells. The effect of inserting QD layers into emitter and base region on device performance is shown. The J(sc) is reduced, while the V(oc) is maintained. The cell with QDs located toward the base side shows better performance, confirmed by both current-voltage and spectral response measurements.

引用

页数：3

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