First principles studies on the structures, electronic states and stability of Sin-mCm clusters

被引:15
作者
Jiang, ZY
Xu, XH
Wu, HS [1 ]
Zhang, FQ
Jin, ZH
机构
[1] Shanxi Normal Univ, Inst Mat Chem, Linfen 041004, Peoples R China
[2] Xian Jiaotong Univ, Sch Mat Sci & Engn, Xian 710049, Peoples R China
来源
JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM | 2003年 / 621卷 / 03期
关键词
Sin-1C and Sin-2C2 clusters; DFT theory; geometric configuration; ground state; stability;
D O I
10.1016/S0166-1280(02)00643-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Geometries, electronic states and energies of Sin-1C and Sin-2C2 (n = 3-8) have been investigated using the density functional theory. Structural optimization and frequency analyses are performed with the basis of 6-311G(d). The calculations predict the existence of a number of previously unknown isomers. The strong C-C bonds are favored over C-Si bonds in the Sin-2C2 molecules. The stability of the Sin-1C (n = 3-8) clusters with even n are greater than that with odd n. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:279 / 284
页数:6
相关论文
共 15 条
[1]   COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].
BHATNAGAR, M ;
BALIGA, BJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655
[2]   Study on electron trapping and interface states of various gate dielectric materials in 4H-SiC metal-oxide-semiconductor capacitors [J].
Cho, W ;
Kosugi, R ;
Senzaki, J ;
Fukuda, K ;
Arai, K ;
Suzuki, S .
APPLIED PHYSICS LETTERS, 2000, 77 (13) :2054-2056
[3]   Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films [J].
Choi, WK ;
Ong, TY ;
Tan, LS ;
Loh, FC ;
Tan, KL .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4968-4973
[4]  
ERKOC S, 2000, PHYSICA E, V8, P1317
[5]   A COMPARATIVE AB-INITIO STUDY OF THE SI2C4, SI3C3, AND SI4C2 CLUSTERS [J].
FROUDAKIS, G ;
ZDETSIS, A ;
MUHLHAUSER, M ;
ENGELS, B ;
PEYERIMHOFF, SD .
JOURNAL OF CHEMICAL PHYSICS, 1994, 101 (08) :6790-6799
[6]   THEORETICAL-STUDY OF THE SI3C2 CLUSTER [J].
FROUDAKIS, GE ;
MUHLHAUSER, M ;
ZDETSIS, AD .
CHEMICAL PHYSICS LETTERS, 1995, 233 (5-6) :619-626
[7]   Structure and bonding in mixed silicon-carbon clusters and their anions [J].
Hunsicker, S ;
Jones, RO .
JOURNAL OF CHEMICAL PHYSICS, 1996, 105 (12) :5048-5060
[8]   PHOTOELECTRON-SPECTROSCOPY OF SILICON-CARBON CLUSTER ANIONS (SINCM-) [J].
NAKAJIMA, A ;
TAGUWA, T ;
NAKAO, K ;
GOMEI, M ;
KISHI, R ;
IWATA, S ;
KAYA, K .
JOURNAL OF CHEMICAL PHYSICS, 1995, 103 (06) :2050-2057
[9]   Infrared-reflection characterization of sintered SiC thermoelectric semiconductors with the use of a four-component effective medium model [J].
Okamoto, Y ;
Ordin, SV ;
Kawahara, T ;
Fedorov, MI ;
Miida, Y ;
Miyakawa, T .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) :6728-6737
[10]   Silicon-carbon mixed clusters [J].
Pellarin, M ;
Ray, C ;
Melinon, P ;
Lerme, J ;
Vialle, JL ;
Keghelian, P ;
Perez, A ;
Broyer, M .
CHEMICAL PHYSICS LETTERS, 1997, 277 (1-3) :96-104