Ionic doping effect in ZrO2 resistive switching memory

被引：157

作者：

Zhang, Haowei ^{[1
,2
]}

Gao, Bin ^{[1
]}

Sun, Bing ^{[1
]}

Chen, Guopeng ^{[1
]}

Zeng, Lang ^{[1
]}

Liu, Lifeng ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Lu, Jing ^{[3
,4
]}

Han, Ruqi ^{[1
]}

Kang, Jinfeng ^{[1
]}

Yu, Bin ^{[5
]}

机构：

[1] Peking Univ, Key Lab Microelect Devices & Circuits, Minist Educ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Yuanpei Coll, Beijing 100871, Peoples R China

[3] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

[4] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[5] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

aluminium; doping; lanthanum; random-access storage; titanium; vacancies (crystal); zirconium compounds; LOW-POWER; RESISTANCE; DEFECTS;

D O I：

10.1063/1.3364130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen vacancy (V-O) plays the critical role for resistive switching in transition metal oxide resistive random access memory (RRAM). First principles calculation is performed to study the impact of metallic ion (Al, Ti, or La) doping in ZrO2 on the behaviors of V-O, including defect energy level and formation energy (E-v(f)). Trivalent dopant (Al or La) significantly reduces E-v(f). Based on the calculated results, ZrO2-based RRAM devices are designed to control the formation of V-O, and improved resistive switching uniformity is demonstrated in experiments.

引用

页数：3

共 26 条

[1]

Baek IG, 2005, INT EL DEVICES MEET, P769

[2] Oxygen vacancy in monoclinic HfO2:: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments [J].

Broqvist, Peter ;

Pasquarello, Alfredo .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[3] Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals [J].

Chang, Wen-Yuan ;

Cheng, Kai-Jung ;

Tsai, Jui-Ming ;

Chen, Hung-Jen ;

Chen, Frederick ;

Tsai, Ming-Jinn ;

Wu, Tai-Bor .

APPLIED PHYSICS LETTERS, 2009, 95 (04)

[4] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[5] Structure and electrical levels of point defects in monoclinic zirconia [J].

Foster, AS ;

Sulimov, VB ;

Gejo, FL ;

Shluger, AL ;

Nieminen, RM .

PHYSICAL REVIEW B, 2001, 64 (22)

[6] Nonpolar nonvolatile resistive switching in Cu doped ZrO2 [J].

Guan, Weihua ;

Long, Shibing ;

Liu, Qi ;

Liu, Ming ;

Wang, Wei .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) :434-437

[7]

Jeong DS, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1968416, 10.1063/1.1865326]

[8]

Lee H, 2008, STUD COMPUT INTELL, V110, P1, DOI 10.1109/IEDM.2008.4796677

[9] HfOx Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode [J].

Lee, Heng Yuan ;

Chen, Pang-Shiu ;

Wu, Tai-Yuan ;

Chen, Yu Sheng ;

Chen, Fred ;

Wang, Ching-Chiun ;

Tzeng, Pei-Jer ;

Lin, C. H. ;

Tsai, Ming-Jinn ;

Lien, Chenhsin .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (07) :703-705

[10] Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory [J].

Lee, Myoung-Jae ;

Han, Seungwu ;

Jeon, Sang Ho ;

Park, Bae Ho ;

Kang, Bo Soo ;

Ahn, Seung-Eon ;

Kim, Ki Hwan ;

Lee, Chang Bum ;

Kim, Chang Jung ;

Yoo, In-Kyeong ;

Seo, David H. ;

Li, Xiang-Shu ;

Park, Jong-Bong ;

Lee, Jung-Hyun ;

Park, Youngsoo .

NANO LETTERS, 2009, 9 (04) :1476-1481

← 1 2 3 →