Formation of gap states and enhanced current injection efficiency in organic light emitting diodes incorporated with subphthalocyanine

被引：18

作者：

Chen, Yu-Hung ^{[1
,2
]}

Chang, Yu-Jen ^{[1
,2
]}

Lee, Guan-Ru ^{[1
,2
]}

Chang, Jung-Hung ^{[1
,2
]}

Wu, I-Wen ^{[1
,2
]}

Fang, Jheng-Hao ^{[1
,2
]}

Hsu, Shu-Han ^{[1
,2
]}

Liu, Shun-Wei ^{[1
,2
]}

Wu, Chih-I ^{[1
,2
]}

Pi, Tun-Wen ^{[3
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 03期

关键词：

Hole injection; Photoemission; Subphthalocyanine; INDIUM-TIN-OXIDE; ELECTROLUMINESCENT DEVICES; ELECTRONIC-STRUCTURES; PHTHALOCYANINE; SPECTROSCOPY; VOLTAGE;

D O I：

10.1016/j.orgel.2009.11.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The improvement of current injection efficiency in organic light emitting diodes is demonstrated with incorporation of SubPc-doped NPB as hole injection layers. The photoemission spectra illustrate the presence of gap states and the occurrence of axial reaction on SubPc with NPB. Quantum chemistry calculation provides simulated valence-band spectra indicating that the formation of gap states is due to the HOMOs of new complexes created from the reaction of SubPc and NPB, which facilitate the hole injection at the anode interfaces. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：445 / 449

页数：5

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