High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells

被引：47

作者：

Miyajima, Shinsuke ^{[1
]}

Irikawa, Junpei ^{[1
]}

Yamada, Akira ^{[2
]}

Konagai, Makoto ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

dielectric hysteresis; ferroelectric switching; graphene; nanoelectromechanical devices; nanostructured materials; organic field effect transistors; quantum interference devices; random-access storage; tunnelling; CHEMICAL-VAPOR-DEPOSITION; LOW SUBSTRATE-TEMPERATURE; HOT-WIRE CVD; N-TYPE; PLASMA; LAYER;

D O I：

10.1063/1.3460917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a highly transparent n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter for crystalline silicon (c-Si) heterojunction solar cells. A low emitter saturation current density (J(0e)) of 1.4 x 10(1) fA/cm(2) was obtained under optimal deposition conditions. A c-Si heterojunction solar cell fabricated on a p-type c-Si wafer without texturing showed an active area efficiency of 17.9% [open-circuit voltage (V(oc)) = 0.668 V, short-circuit current density (J(sc)) = 36.7 mA/cm(2), fill factor=0.731]. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (< 500 nm). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3460917]

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页数：3

相关论文

共 22 条

[1] Crystalline Si Heterojunction Solar Cells with the Double Heterostructure of Hydrogenated Amorphous Silicon Oxide [J].

Fujiwara, Hiroyuki ;

Sai, Hitoshi ;

Kondo, Michio .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06)

[2] Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells [J].

Fujiwara, Hiroyuki ;

Kaneko, Tetsuya ;

Kondo, Michio .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[3] Highly transparent microcrystalline silicon carbide grown with hot wire chemical vapor deposition as window layers in n-i-p microcrystalline silicon solar cells [J].

Huang, Y. ;

Dasgupta, A. ;

Gordijn, A. ;

Finger, F. ;

Carius, R. .

APPLIED PHYSICS LETTERS, 2007, 90 (20)

[4] Plasma and fluorocarbon-gas free Si dry etching process using a Cat-CVD system [J].

Izumi, A ;

Sato, H ;

Hashioka, S ;

Kudo, M ;

Matsumura, H .

MICROELECTRONIC ENGINEERING, 2000, 51-2 :495-503

[5]

Kane D.E., 1985, PROC 18 IEEE PHOTOVO, P578

[6] Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD [J].

Klein, Stefan ;

Dasgupta, Arup ;

Finger, Friedhelm ;

Carius, Reinhard ;

Bronger, Torsten .

THIN SOLID FILMS, 2008, 516 (05) :630-632

[7] Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells [J].

Limmanee, Amornrat ;

Sugiura, Tsutomu ;

Yamamoto, Hiroshi ;

Sato, Takehiko ;

Miyajima, Shinsuke ;

Yamada, Akira ;

Konagai, Makoto .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (12) :8796-8798

[8] Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD [J].

Miyajima, S ;

Yamada, A ;

Konagai, M .

THIN SOLID FILMS, 2006, 501 (1-2) :186-189

[9] Properties of hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire chemical vapor deposition at a low substrate temperature [J].

Miyajima, S ;

Yamada, A ;

Konagai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (9A-B) :L1190-L1192

[10] Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature [J].

Miyajima, Shinsuke ;

Sawamura, Makoto ;

Yamada, Akira ;

Konagai, Makoto .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) :3368-3371