Sudden nucleation versus scale invariance of InAs quantum dots on GaAs

被引:29
|
作者
Fanfoni, M.
Placidi, E.
Arciprete, F.
Orsini, E.
Patella, F.
Balzarotti, A.
机构
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] INFM, CNR, I-00133 Rome, Italy
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 24期
关键词
D O I
10.1103/PhysRevB.75.245312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
InAs quantum dots (QDs) self-assembled on GaAs(001) at the early stage of growth show scale invariance of the island size distribution, which have been interpreted in the framework of the Mulheran and Blackman theory. The central concept is the capture zone of the growing nucleus properly identified by the Voronoi' cells. We show that the volume distribution of the quantum dots well overlaps the area distribution of the associated Voronoi' cells determined experimentally. Moreover, we evidence that scale invariance takes place in a restricted range of coverage and, basically, thanks to a very fast nucleation process. By comparison between experimental data and numerical simulations of the growth, we determine the spatial correlation length among QDs. The key conditions for scale invariance to occur are pointed out, thus defining the range of validity of the model for application to other systems.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Nucleation and ripening of seeded InAs/GaAs quantum dots
    Bennett, AJ
    Murray, R
    JOURNAL OF CRYSTAL GROWTH, 2002, 240 (3-4) : 439 - 444
  • [2] Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE
    Torelly, G.
    Jakomin, R.
    Pinto, L. D.
    Pires, M. P.
    Ruiz, J.
    Caldas, P. G.
    Prioli, R.
    Xie, H.
    Ponce, F. A.
    Souza, P. L.
    JOURNAL OF CRYSTAL GROWTH, 2016, 434 : 47 - 54
  • [3] Step erosion during nucleation of InAs/GaAs(001) quantum dots
    Placidi, E
    Arciprete, F
    Sessi, V
    Fanfoni, M
    Patella, F
    Balzarotti, A
    APPLIED PHYSICS LETTERS, 2005, 86 (24) : 1 - 3
  • [4] InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates
    Eugenio-Lopez, E.
    Lopez-Lopez, M.
    Gorbatchev, A. Yu.
    Espinosa-Vega, L. I.
    Cortes-Mestizo, I. E.
    Mercado-Ornelas, C. A.
    Del Rio-De Santiago, A.
    Mendez-Garcia, Victor H.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2018, 95 : 22 - 26
  • [5] Atomic scale characterization of Mn doped InAs/GaAs quantum dots
    Bozkurt, M.
    Grant, V. A.
    Ulloa, J. M.
    Campion, R. P.
    Foxon, C. T.
    Marega, E.
    Salamo, G. J.
    Koenraad, P. M.
    APPLIED PHYSICS LETTERS, 2010, 96 (04)
  • [6] InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations
    Araujo, D.
    El Bouayadi, R.
    Gutierrez, M.
    Pastore, C. E.
    Hopkinson, M.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 165 (1-2): : 88 - 93
  • [7] Rough InAs/GaAs quantum dots
    Bezerra, M. G.
    Farlas, G. A.
    Freire, J. A. K.
    Ferreira, R.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 899 - +
  • [8] Dephasing in InAs/GaAs quantum dots
    Borri, P
    Langbein, W
    Mork, J
    Hvam, JM
    Heinrichsdorff, F
    Mao, MH
    Bimberg, D
    PHYSICAL REVIEW B, 1999, 60 (11): : 7784 - 7787
  • [9] Controlled nucleation and optical properties of InAs quantum dots grown on faceted GaAs microstructures
    Zander, Marlene
    Nishinaga, Jiro
    Gotoh, Hideki
    Horikoshi, Yoshiji
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 2013, 10 (11): : 1500 - 1504
  • [10] The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots
    Bute, O.
    Cimpoca, Gh. V.
    Placidi, E.
    Arciprete, F.
    Patella, F.
    Fanfoni, M.
    Balzarotti, A.
    CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2007, : 337 - +