Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

被引：688

作者：

Simon, John ^{[1
]}

Protasenko, Vladimir ^{[1
]}

Lian, Chuanxin ^{[1
]}

Xing, Huili ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

SCIENCE | 2010年 / 327卷 / 5961期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES;

D O I：

10.1126/science.1183226

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temperature for applications such as lasers because the positive-charge carriers (holes) have a large thermal activation energy. We demonstrate high-efficiency p-type doping by ionizing acceptor dopants using the built-in electronic polarization in bulk uniaxial semiconductor crystals. Because the mobile hole gases are field-ionized, they are robust to thermal freezeout effects and lead to major improvements in p-type electrical conductivity. The new doping technique results in improved optical emission efficiency in prototype ultraviolet light-emitting-diode structures. Polarization-induced doping provides an attractive solution to both p-and n-type doping problems in wide-band-gap semiconductors and offers an unconventional path for the development of solid-state deep-ultraviolet optoelectronic devices and wide-band-gap bipolar electronic devices of the future.

引用

页码：60 / 64

页数：5

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