Valley Splitting and Spin Lifetime Enhancement in Strained Thin Silicon Films

被引：0
|
作者：
Osintsev, D. [1 ]
Sverdlov, V. [1 ]
Neophytou, N. [2 ]
Selberherr, S. [1 ]
机构：
[1] TU Wien, Inst Microelect, Gusshausstr 27-29-E360, A-1040 Vienna, Austria
[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
来源：
2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE) | 2014年
基金：
欧洲研究理事会;
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Spintronics attracts much attention because of the potential to build novel spin-based devices which are superior to nowadays charge-based microelectronic devices. Silicon, the main element of microelectronics, is promising for spin-driven applications. We investigate the surface roughness and electron-phonon limited spin relaxation in silicon films taking into account the coupling between the relevant valleys through the Gamma-point. We demonstrate that applying uniaxial stress along the [110] direction considerably suppresses the spin relaxation.
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页数：4
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