Room temperature operation of amorphous carbon-based single-electron transistors fabricated by beam-induced deposition techniques

Single-electron transistors (SETs) were directly fabricated using scanning electron microscopy (SEM) and a focused ion beam (FIB) system. Amorphous carbon microstructures were modified to the source, drain electrodes and the capacitive island using SEM. The gate electrode consisting of tungsten carbide deposited by RE was also supplemented. Namely, microscopic tunnel junctions were prepared by beam-induced reaction processes, which are simple and unique techniques for microfabrication. At room temperature, a Coulomb staircase and Coulomb blockade oscillation were successfully recorded, and this beam-induced method was confirmed to be one of the practical processes for realizing SETs.