Room temperature ferromagnetism in Cr-doped In2O3 on high vacuum annealing of thin films and bulk samples

被引：44
作者：
Kharel, P.
Sudakar, C. [1 ]
Sahana, M. B.
Lawes, G.
Suryanarayanan, R.
Naik, R.
Naik, V. M.
机构：
[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA
[2] Univ Michigan, Dept Nat Sci, Dearborn, MI 48128 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期
关键词：
D O I：
10.1063/1.2712175
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the observation of room temperature ferromagnetism in Cr-doped In2O3 bulk samples and spin-coated thin films. The samples showed a clear ferromagnetism above 300 K with magnetic moments of 0.008 and 0.22 mu(B)/Cr at 300 K for the bulk and thin film, respectively, only after high vacuum (HV) annealing at 600 degrees C. The vacuum annealed Cr-doped In2O3 thin films showed a typical semiconducting behavior with a room temperature resistivity of 0.73 Omega cm, while bulk samples were more conducting (23 m Omega cm). We present systematic investigations on the influence of HV annealing on the carrier concentrations, resistivity, and magnetic properties of the samples. (c) 2007 American Institute of Physics.
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共 19 条
  • [1] Donor impurity band exchange in dilute ferromagnetic oxides
    Coey, JMD
    Venkatesan, M
    Fitzgerald, CB
    [J]. NATURE MATERIALS, 2005, 4 (02) : 173 - 179
  • [2] Cullity B.D., 1956, ELEMENTS XRAY DIFFRA
  • [3] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
    Dietl, T
    Ohno, H
    Matsukura, F
    Cibert, J
    Ferrand, D
    [J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
  • [4] Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles -: art. no. 155410
    Ederth, J
    Johnsson, P
    Niklasson, GA
    Hoel, A
    Hultåker, A
    Heszler, P
    Granqvist, CG
    van Doorn, AR
    Jongerius, MJ
    Burgard, D
    [J]. PHYSICAL REVIEW B, 2003, 68 (15):
  • [5] Room temperature ferromagnetic n-type semiconductor in (In1-xFex)2O3-σ -: art. no. 052503
    He, J
    Xu, SF
    Yoo, YK
    Xue, QZ
    Lee, HC
    Cheng, SF
    Xiang, XD
    Dionne, GF
    Takeuchi, I
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (05) : 1 - 3
  • [6] Room temperature ferromagnetism in laser ablated Ni-doped In2O3 thin films -: art. no. 102505
    Hong, NH
    Sakai, J
    Huong, NT
    Brizé, V
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (10)
  • [7] Ferromagnetic semiconductors: moving beyond (Ga, Mn)As
    Macdonald, AH
    Schiffer, P
    Samarth, N
    [J]. NATURE MATERIALS, 2005, 4 (03) : 195 - 202
  • [8] Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide
    Matsumoto, Y
    Murakami, M
    Shono, T
    Hasegawa, T
    Fukumura, T
    Kawasaki, M
    Ahmet, P
    Chikyow, T
    Koshihara, S
    Koinuma, H
    [J]. SCIENCE, 2001, 291 (5505) : 854 - 856
  • [9] Mott N, 1990, METAL INSULATOR TRAN
  • [10] High temperature ferromagnetism with a giant magnetic moment in transparent Co-doped SnO2-δ -: art. no. 077205
    Ogale, SB
    Choudhary, RJ
    Buban, JP
    Lofland, SE
    Shinde, SR
    Kale, SN
    Kulkarni, VN
    Higgins, J
    Lanci, C
    Simpson, JR
    Browning, ND
    Das Sarma, S
    Drew, HD
    Greene, RL
    Venkatesan, T
    [J]. PHYSICAL REVIEW LETTERS, 2003, 91 (07)
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