Room temperature ferromagnetism in Cr-doped In2O3 on high vacuum annealing of thin films and bulk samples

被引：44
作者：
Kharel, P.
Sudakar, C. [1 ]
Sahana, M. B.
Lawes, G.
Suryanarayanan, R.
Naik, R.
Naik, V. M.
机构：
[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA
[2] Univ Michigan, Dept Nat Sci, Dearborn, MI 48128 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期
关键词：
D O I：
10.1063/1.2712175
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the observation of room temperature ferromagnetism in Cr-doped In2O3 bulk samples and spin-coated thin films. The samples showed a clear ferromagnetism above 300 K with magnetic moments of 0.008 and 0.22 mu(B)/Cr at 300 K for the bulk and thin film, respectively, only after high vacuum (HV) annealing at 600 degrees C. The vacuum annealed Cr-doped In2O3 thin films showed a typical semiconducting behavior with a room temperature resistivity of 0.73 Omega cm, while bulk samples were more conducting (23 m Omega cm). We present systematic investigations on the influence of HV annealing on the carrier concentrations, resistivity, and magnetic properties of the samples. (c) 2007 American Institute of Physics.
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