Nanoscopic Intrinsic Properties of Ferroelectric Surface and Domain Revealed by Atomically Clean BaTiO3 Surface in UHV and Implications for Applications

被引：0

作者：

Watanabe, Y. ^{[1
]}

Kaku, S. ^{[1
]}

Matsumoto, D. ^{[1
]}

Etho, H. ^{[1
]}

Nakahara, H. ^{[1
]}

Tsuda, H. ^{[1
]}

Cheong, S. ^{[2
]}

Arai, M. ^{[3
]}

机构：

[1] Kyushu Univ, Fukuoka 8128581, Japan

[2] Rutgers State Univ, Piscataway, NJ 08854 USA

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

ISAF: 2009 18TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS | 2009年

关键词：

FIELD-EFFECT TRANSISTOR; ULTRA-HIGH-VACUUM; THEORETICAL STABILITY; MEMORY RETENTION; CONDUCTION; POLARIZATION; MICROSCOPY; OXIDES; FILMS; LAYER;

D O I：

10.1142/9789814299312_0028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report electrostatic and piezoelectric properties of the atomic-level-controlled clean surface of BaTiO3 single crystals in ultra high vacuum (UHV), which has not been reported so far. The results are analyzed by the surface conduction measurements in UHV, reexamination of 180 domain theory, ab-initio calculations.

引用

页码：1 / +

页数：3

共 24 条

[21] Bipolar Carrier (e-/h+) Layer on Clean Surface of Insulating BaTiO3 Crystal Intrinsic to Ferroelectrics [J].