Direct current field and temperature dependent behaviors of antiferroelectric to ferroelectric switching in highly (100)-oriented PbZrO3 thin films

被引：53

作者：

Zhai, JW ^{[1
]}

Chen, HD ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 16期

关键词：

D O I：

10.1063/1.1569420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antiferroelectric PbZrO3 films had been grown on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol-gel process. The electric field-induced antiferroelectric (AFE) to ferroelectric (FE) phase switching behaviors was examined by the polarization versus electrical field measurements as a function of temperature and film thickness. The AFE to FE phase switching was found to shift to lower temperature under a dc bias field. With increasing dc bias field, the FE phase region was enlarged and the FE to paraelectric phase transformation temperature shifted to higher temperature. The adjustability of the AFE phase to FE in temperature was weakened if the thickness of thin film decreased. (C) 2003 American Institute of Physics.

引用

页码：2673 / 2675

页数：3

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